Spatial ordering of stacked quantum dots

C. S. Lee*, B. Kahng, A. L. Barabási

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract (may include machine translation)

We investigate the growth conditions necessary to form an ordered quantum dot crystal by capping spatially ordered quantum dots and growing a new layer of dots on top of the capping layer. Performing Monte Carlo simulations and developing analytic arguments based on the stress energy function, we demonstrate the existence of an optimal capping layer thickness, external flux, and temperature for the formation of quantum dot crystals.

Original languageEnglish
Pages (from-to)984-986
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number7
DOIs
StatePublished - 12 Feb 2001
Externally publishedYes

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