Abstract (may include machine translation)
There is extensive recent experimental evidence of spontaneous superlattice (SL) formation in various II-VI and III-V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux, and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet structure for deposition onto high symmetry surfaces, similar to that observed in InAsSb.
Original language | English |
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Pages (from-to) | 764-766 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 6 |
DOIs | |
State | Published - 10 Feb 1997 |
Externally published | Yes |