Self-organized superlattice formation in II-IV and III-V semiconductors

Albert László Barabási*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract (may include machine translation)

There is extensive recent experimental evidence of spontaneous superlattice (SL) formation in various II-VI and III-V semiconductors. Here we propose an atomistic mechanism responsible for SL formation, and derive a relation predicting the temperature, flux, and miscut dependence of the SL layer thickness. Moreover, the model explains the existence of a critical miscut angle below which no SL is formed, in agreement with results on ZnSeTe, and predicts the formation of a platelet structure for deposition onto high symmetry surfaces, similar to that observed in InAsSb.

Original languageEnglish
Pages (from-to)764-766
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number6
DOIs
StatePublished - 10 Feb 1997
Externally publishedYes

Fingerprint

Dive into the research topics of 'Self-organized superlattice formation in II-IV and III-V semiconductors'. Together they form a unique fingerprint.

Cite this