Self-assembled island formation in heteroepitaxial growth

Albert László Barabási*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract (may include machine translation)

We investigate island formation during heteroepitaxial growth using an atomistic model that incorporates deposition, activated diffusion, and stress relaxation. For high misfit the system naturally evolves into a state characterized by a narrow island size distribution. The simulations indicate the existence of a strain assisted kinetic mechanism responsible for the self-assembling process involving enhanced detachment of atoms from the edge of large islands and biased adatom diffusion.

Original languageEnglish
Pages (from-to)2565-2567
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number19
DOIs
StatePublished - 12 May 1997
Externally publishedYes

Fingerprint

Dive into the research topics of 'Self-assembled island formation in heteroepitaxial growth'. Together they form a unique fingerprint.

Cite this