Dislocation-Free Island Formation in Heteroepitaxial Growth: A Study at Equilibrium

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Abstract (may include machine translation)

We investigate the equilibrium properties of strained heteroepitaxial systems, incorporating the formation and the growth of a wetting film, dislocation-free island formation, and ripening. The derived phase diagram provides a detailed characterization of the possible growth modes in terms of the island density, equilibrium island size, and wetting layer thickness. Comparing our predictions with experimental results we discuss the growth conditions that can lead to stable islands as well as ripening.

Original languageEnglish
Pages (from-to)3708-3711
Number of pages4
JournalPhysical Review Letters
Volume79
Issue number19
DOIs
StatePublished - 10 Nov 1997
Externally publishedYes

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